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Published on: November 9, 2015
Integrating Hyperuniform Disordered Light Trapping Layers in Ultrathin c‑Si Solar Cells
Alexander Lambertz1,2, Nayeun Lee3, Ali P Vafa4
1NWO-I Institute AMOLF, Science Park 104, 1098XG Amsterdam, The Netherlands.
Abstract:
Ultrathin crystalline silicon solar cells require advanced light trapping to compensate for weak near-infrared (NIR) absorption. Here, we integrate hyperuniform disordered light-engineered (HUDLE) nanopatterns with high-quality surface passivation in 4.8 μm c Si cells and demonstrate robust device operation enabled by broadband coupling to guided modes. HUDLE layers enhance the fraction of power scattered beyond the escape cone by up to 30% in the NIR and increase average external quantum efficiency (EQE) by >50% over flat cells and 10% over periodic designs from 750 to 1000 nm. We directly compare periodic and hyperuniform nanopatterns and show that the continuous spatial frequency distribution of HUDLE leads to more homogeneous coupling of light into guided modes. Importantly, this optical enhancement is achieved without compromising open-circuit voltage or fill factor, demonstrating compatibility between advanced nanophotonics and high electronic quality in ultrathin devices. These results establish hyperuniform disorder as a powerful photonic design strategy for ultrathin silicon photovoltaics.

