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Low Trapping Effects and High Electron Confinement in Short AlN/GaN-On-SiC HEMTs by Means of a Thin AlGaN Back

Kathia Harrouche1, Srisaran Venkatachalam1, Lyes Ben-Hammou1

  • 1CNRS-IEMN, Institute of Electronic, Microelectronic and Nanotechnology, 59652 Villeneuve-d'Ascq, France.

Micromachines
|February 25, 2023
PubMed

Keywords:
AlGaN back barrierDIBLGaNHEMTPAEload-pulloutput power density

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