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A 3C-SiC-on-Insulator-Based Integrated Photonic Platform Using an Anodic Bonding Process with Glass Substrates
1Photonic Device Laboratory, Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong.
Micromachines
|February 25, 2023
Summary
This study presents a novel 3C-silicon carbide-on-insulator (3C-SiCoI) platform for integrated photonics. The new platform enables efficient optical confinement and is suitable for large-scale integration of photonic devices.
Area of Science:
- Materials Science
- Optoelectronics
- Nanotechnology
Background:
- Crystalline silicon carbide (SiC) polytypes offer wide bandgaps and nonlinear optical properties, but wafer forms lack refractive index contrast for optical confinement.
- Realizing integrated photonic platforms with SiC is challenging due to limitations in existing wafer forms.
Purpose of the Study:
- To demonstrate a 3C-SiC-on-insulator (3C-SiCoI) integrated photonic platform.
- To enable optical confinement in SiC for advanced photonic applications.
Main Methods:
- Epitaxial 3C-SiC layer transfer from silicon to borosilicate glass using anodic bonding.
- Fabrication of waveguide-coupled microring resonators via sulfur hexafluoride (SF6)-based dry etching.
- Characterization to exclude photorefractive effects at low optical power.
Main Results:
- Achieved nearly 100% area transfer die-to-wafer bonding.
- Demonstrated microring resonators with a loaded quality (Q) factor of 1.4 × 105.
- Confirmed the absence of photorefractive effects at sub-milliwatt optical power levels.
Conclusions:
- The developed 3C-SiCoI platform overcomes previous limitations for integrated photonics.
- This platform is highly promising for large-scale integration of linear, nonlinear, and quantum photonic devices.
