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Analytical Separated Neuro-Space Mapping Modeling Method of Power Transistor
Xu Wang1,2,3, Tingpeng Li1, Shuxia Yan2,3
1State Key Laboratory of Complex Electromagnetic Environmental Effects on Electronics and Information System, Luoyang 471003, China.
A new power transistor model, neuro-space mapping (Neuro-SM), uses separated networks to accurately capture DC and AC characteristics. This advanced approach enhances existing models with efficient training and simple structures.
Area of Science:
- Electrical Engineering
- Materials Science
- Computational Modeling
Background:
- Accurate modeling of power transistors is crucial for electronic circuit design.
- Existing models face limitations in capturing complex DC and AC characteristics, especially for advanced semiconductor devices.
- Neural network-based approaches offer potential but often struggle with parameter interference and training efficiency.
Purpose of the Study:
- To propose a novel, analytically separated neuro-space mapping (Neuro-SM) model for power transistors.
- To enhance the accuracy of DC and AC characteristic modeling by mitigating internal parameter interference.
- To develop an efficient training methodology for accelerated optimization.
Main Methods:
- Development of an analytically separated neuro-space mapping (Neuro-SM) model.
- Introduction of two distinct mapping networks within the model to isolate DC and AC parameter influences.
- Derivation of novel analytical formulations for integrating mapping networks with a coarse transistor model.
- Implementation of an advanced training approach incorporating sensitivity analysis for faster optimization.
Main Results:
- The proposed Neuro-SM model accurately represents both DC and AC characteristics of power transistors.
- The separated mapping networks effectively prevent interference between internal neural network parameters.
- The advanced training approach significantly accelerates the model optimization process.
- Experimental validation using laterally diffused metal-oxide-semiconductor transistor data confirms the model's accuracy and efficiency.
Conclusions:
- The analytically separated Neuro-SM model offers a significant advancement in power transistor modeling.
- The model overcomes accuracy limitations of existing methods by enabling flexible transformation of terminal signals.
- The proposed method provides a simple yet powerful tool for accurate transistor characterization with efficient training.
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