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Investigation and Modeling of the Behavior of Temperature Characteristics of 0.3-1.1 GHz Complementary Metal Oxide
Ruiliang Li1, Shaohua Zhou1,2,3, Cheng Yang1
1Qingdao Institute for Marine Technology of Tianjin University, Qingdao 266200, China.
Abstract:
A power amplifier (PA) stands as a central module within the electronic information system (EIS), and any variation in a PA's specifications has a direct impact on the EIS's performance, especially in the face of temperature fluctuations. In examining the influence of PA specification changes on the EIS, we employed support vector machine (SVM) to model the behavior of the temperature characteristics of 0.3-1.1 GHz complementary metal oxide semiconductor (CMOS) class-A broadband PAs. The results show that the parameters of S11, S12, S21, and S22 can be effectively modeled. SVM outperforms Elman and GRNN in terms of combined modeling time and modeling accuracy. This research can be extended to modeling the behavior of other types of power amplifiers or devices and circuits.
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