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A Highly Integrated C-Band Feedback Resistor Transceiver Front-End Based on Inductive Resonance and Bandwidth
Boyang Shan1, Haipeng Fu2, Jian Wang1,2,3
1School of Microelectronics, Tianjin University, Tianjin 300072, China.
Micromachines
|February 24, 2024
Summary
This study introduces a highly integrated C-band RF transceiver front-end for Ultra-Wideband (UWB) positioning. The design achieves excellent performance, marking a significant advancement in UWB system integration.
Area of Science:
- RF Engineering
- Semiconductor Device Physics
Background:
- Ultra-Wideband (UWB) positioning systems require efficient and integrated RF front-ends.
- Existing solutions often face challenges with integration, bandwidth, and noise performance.
Purpose of the Study:
- To design and present a highly integrated C-band RF transceiver front-end module (FEM).
- To optimize the design for Ultra-Wideband (UWB) positioning applications using advanced semiconductor processes.
Main Methods:
- Utilized a 0.25 μm GaAs pseudomorphic high electron mobility transistor (pHEMT) process.
- Implemented inductive resonance techniques for switch isolation and stability.
- Employed bandwidth expansion techniques for improved receiver noise performance.
Main Results:
- Achieved a highly integrated design including SPDT T/R switches, LNA, and PA.
- Demonstrated typical gains of 22 dB (transmit) and 18 dB (receive) in the 4.5-8 GHz band.
- Reported a low noise figure of 2 dB and a compact chip area of 1.56 × 1.46 mm².
Conclusions:
- The developed C-band RF transceiver front-end represents the most highly integrated design for UWB applications in the specified process.
- The design offers a promising solution for enhancing UWB positioning system performance through improved integration and RF characteristics.
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