Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

421
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
421
Design Example: Capacitance Multiplier Circuit01:20

Design Example: Capacitance Multiplier Circuit

876
In integrated circuit technology, a capacitance multiplier is often utilized to produce a larger capacitance value when a small physical capacitance falls short. This is achieved by a circuit that multiplies capacitance values by a factor of up to 1000, such that a 10-pF capacitor can replicate the performance of a 100-nF capacitor.
The circuit illustrated in Figure 1 below incorporates two op-amps, with the first operating as a voltage follower and the second acting as an inverting amplifier.
876
MOSFET Amplifiers01:17

MOSFET Amplifiers

204
The MOSFET, when operating in its active region, functions as a voltage-controlled current source. In this region, the gate-to-source voltage controls the drain current. This principle underlies the operation of the transconductance MOSFET amplifier. The output current is directed through a load resistor to convert this amplifier into a voltage amplifier. The output voltage is then obtained by subtracting the voltage drop across the load resistance from the supply voltage. This process results...
204
Biasing of FET01:22

Biasing of FET

337
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
337
Small-Signal Analysis of MOSFET Amplifiers01:23

Small-Signal Analysis of MOSFET Amplifiers

639
In small-signal analysis, a MOSFET transistor amplifier acts as a linear amplifier when operating in its saturation region. The gate-to-source voltage (VGS) of the MOSFET is the sum of the DC biasing voltage and the small time-varying input signal. This combination sets up the operating point and modulates the drain current (ID) that flows from the drain to the source. When a small AC signal is superimposed on the DC bias voltage at the gate, the instantaneous drain current comprises three...
639
Voltage Doubler Circuit01:23

Voltage Doubler Circuit

717
A voltage doubler circuit integrates two main components: a clamping section and a rectifier section. The clamping section consists of a capacitor (C1) and a diode (D1), whereas the rectifier section is equipped with another diode (D2) and capacitor (C2). This circuit produces an output voltage with twice the amplitude of the sinusoidal input voltage.
717

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Actinomycete-induced ZnO-B<sub>2</sub>O<sub>3</sub> nanoparticles synthesis for enhancing pea plant immunity and suppress Pythium irregulare infection.

Folia microbiologica·2026
Same author

Optimizing Transport Carrier Free All-Polymer Solar Cells for Indoor Applications: TCAD Simulation under White LED Illumination.

Polymers·2024
Same author

π-π Stacking at the Perovskite/C<sub>60</sub> Interface Enables High-Efficiency Wide-Bandgap Perovskite Solar Cells.

Small (Weinheim an der Bergstrasse, Germany)·2024
Same author

Investigation of Polymer/Si Thin Film Tandem Solar Cell Using TCAD Numerical Simulation.

Polymers·2023
Same author

Protective role of iron oxide nanocomposites on disease index, and biochemical resistance indicators against Fusarium oxysporum induced-cucumber wilt disease: In vitro, and in vivo studies.

Microbial pathogenesis·2023
Same author

Analytical and Numerical Investigation of Nanowire Transistor X-ray Detector.

Materials (Basel, Switzerland)·2023

Related Experiment Video

Updated: Aug 8, 2025

Real-Time DC-dynamic Biasing Method for Switching Time Improvement in Severely Underdamped Fringing-field Electrostatic MEMS Actuators
11:44

Real-Time DC-dynamic Biasing Method for Switching Time Improvement in Severely Underdamped Fringing-field Electrostatic MEMS Actuators

Published on: August 15, 2014

10.4K

Boosting the Electrostatic MEMS Converter Output Power by Applying Three Effective Performance-Enhancing Techniques.

Mona S Salem1, Abdelhalim Zekry1, Mohamed Abouelatta1

  • 1Electronics and Communications Engineering Department, Faculty of Engineering, Ain Shams University (ASU), Cairo 11566, Egypt.

Micromachines
|February 25, 2023
PubMed
Summary

This study enhanced electrostatic micro-electro-mechanical systems (MEMS) converter power by upgrading CMOS technology, optimizing parameters, and redesigning the structure. These methods significantly boosted output power for improved energy harvesting.

Keywords:
COMSOL Multiphysics 5.4MEMS converterboosting the output powerperformance enhancementvibration

More Related Videos

Design and Characterization Methodology for Efficient Wide Range Tunable MEMS Filters
15:25

Design and Characterization Methodology for Efficient Wide Range Tunable MEMS Filters

Published on: February 4, 2018

6.2K
A Novel Method for In Situ Electromechanical Characterization of Nanoscale Specimens
07:15

A Novel Method for In Situ Electromechanical Characterization of Nanoscale Specimens

Published on: June 2, 2017

9.3K

Related Experiment Videos

Last Updated: Aug 8, 2025

Real-Time DC-dynamic Biasing Method for Switching Time Improvement in Severely Underdamped Fringing-field Electrostatic MEMS Actuators
11:44

Real-Time DC-dynamic Biasing Method for Switching Time Improvement in Severely Underdamped Fringing-field Electrostatic MEMS Actuators

Published on: August 15, 2014

10.4K
Design and Characterization Methodology for Efficient Wide Range Tunable MEMS Filters
15:25

Design and Characterization Methodology for Efficient Wide Range Tunable MEMS Filters

Published on: February 4, 2018

6.2K
A Novel Method for In Situ Electromechanical Characterization of Nanoscale Specimens
07:15

A Novel Method for In Situ Electromechanical Characterization of Nanoscale Specimens

Published on: June 2, 2017

9.3K

Area of Science:

  • Micro-electro-mechanical systems (MEMS)
  • Energy Harvesting
  • Semiconductor Device Physics

Background:

  • Electrostatic MEMS converters are crucial for energy harvesting.
  • Enhancing their output power is essential for practical applications.
  • Existing designs face limitations in power conversion efficiency.

Purpose of the Study:

  • To significantly boost the output power of electrostatic MEMS converters.
  • To investigate the impact of CMOS technology scaling on converter performance.
  • To optimize structural and technological parameters for maximum power output.

Main Methods:

  • Upgraded CMOS technology from 0.35 µm to 0.6 µm for power conditioning and control circuits.
  • Optimized MEMS converter parameters including thickness, finger width, and length.
  • Redesigned the converter structure to utilize shuttle mass area for increased capacitance.

Main Results:

  • CMOS technology upgrade increased maximum system voltage from 8 V to 30 V, boosting power from 2.1 mW to 4.5 mW.
  • Parameter optimization further increased output power from 4.5 mW to 11.2 mW.
  • Structural redesign enhanced output power to a final 14.29 mW, a total increase of 12.19 mW.

Conclusions:

  • A combination of CMOS scaling, parameter optimization, and structural redesign effectively enhances electrostatic MEMS converter output power.
  • The developed techniques offer a viable pathway for improving energy harvesting device performance.
  • Further research can explore advanced materials and fabrication processes for even greater power gains.