Related Experiment Video

Updated: Aug 8, 2025

Enhanced Electron Injection and Exciton Confinement for Pure Blue Quantum-Dot Light-Emitting Diodes by Introducing Partially Oxidized Aluminum Cathode
10:41

Enhanced Electron Injection and Exciton Confinement for Pure Blue Quantum-Dot Light-Emitting Diodes by Introducing Partially Oxidized Aluminum Cathode

Published on: May 31, 2018

8.9K

Modified Distributed Bragg Reflectors for Color Stability in InGaN Red Micro-LEDs

Wen-Chien Miao1,2, Yu-Heng Hong1, Fu-He Hsiao1,2

  • 1Semiconductor Research Center, Hon Hai Research Institute, Taipei 11492, Taiwan.

Nanomaterials (Basel, Switzerland)
|February 25, 2023
PubMed

Keywords:
InGaNcolor stabilitymicro-LEDmodified DBR

More Related Videos

In Depth Analyses of LEDs by a Combination of X-ray Computed Tomography CT and Light Microscopy LM Correlated with Scanning Electron Microscopy SEM10:42

In Depth Analyses of LEDs by a Combination of X-ray Computed Tomography CT and Light Microscopy LM Correlated with Scanning Electron Microscopy SEM

Published on: June 16, 2016

9.4K
Local Field Fluorescence Microscopy: Imaging Cellular Signals in Intact Hearts10:33

Local Field Fluorescence Microscopy: Imaging Cellular Signals in Intact Hearts

Published on: March 8, 2017

8.4K

Related Concept Videos

Biasing of P-N Junction01:16

Biasing of P-N Junction

The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
658