LGAD-Based Silicon Sensors for 4D Detectors

Area of Science:

• Particle Physics
• Silicon Sensor Technology
• Detector Development

Background:

• Low-Gain Avalanche Diodes (LGADs) are crucial for fast detection of Minimum Ionizing Particles (MIPs) in High-Energy Physics (HEP).
• Existing LGADs provide excellent timing resolution for distinguishing particle tracks separated by picoseconds, essential for collider experiments.
• However, conventional LGADs suffer from poor spatial resolution, limiting their application in complex event reconstruction.

Purpose of the Study:

• To introduce and discuss novel LGAD-based silicon sensor designs.
• To address the limitation of poor spatial resolution in traditional LGADs.
• To explore the integration of advanced LGAD concepts into CMOS substrates for enhanced functionality.

Main Methods:

• Development of advanced LGAD sensor families, including capacitively coupled (AC-LGAD), deep-junction (DJ-LGAD), and trench-isolated (TI-LGAD) variants.
• Fabrication of these novel sensors in small-scale, research-focused cleanroom facilities.
• Investigation into the integration of these sensor concepts within Complementary Metal-Oxide-Semiconductor (CMOS) substrates.

Main Results:

• New LGAD sensor families (AC-LGAD, DJ-LGAD, TI-LGAD) are under development to provide both excellent timing and spatial information.
• These advanced LGADs can be fabricated in research cleanrooms, facilitating rapid scientific community development.
• Efforts are underway to integrate these sensors into CMOS technology for on-chip read-out electronics.

Conclusions:

• Advanced LGAD designs offer a promising solution to overcome the spatial resolution limitations of traditional LGADs.
• The development of these sensors in research facilities accelerates innovation in particle detection technology.
• CMOS integration represents a key step towards scalable and integrated solutions for future HEP experiments.