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Updated: Aug 8, 2025

Residue-Free Fabrication of van der Waals Heterostructures of Two-Dimensional Materials
Published on: July 18, 2025
Nanocavity-Integrated van der Waals Heterobilayers for Nano-excitonic Transistor
Yeonjeong Koo1, Hyeongwoo Lee1, Tatiana Ivanova2
1Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea.
Abstract:
Optical computing with optical transistors has emerged as a possible solution to the exponentially growing computational workloads, yet an on-chip nano-optical modulation remains a challenge due to the intrinsically noninteracting nature of photons in addition to the diffraction limit. Here, we present an all-optical approach toward nano-excitonic transistors using an atomically thin WSe2/Mo0.5W0.5Se2 heterobilayer inside a plasmonic tip-based nanocavity. Through optical wavefront shaping, we selectively modulate tip-enhanced photoluminescence (TEPL) responses of intra- and interlayer excitons in a ∼25 nm2 area, demonstrating the enabling concept of an ultrathin 2-bit nano-excitonic transistor. We suggest a simple theoretical model describing the underlying adaptive TEPL modulation mechanism, which relies on the additional spatial degree of freedom provided by the presence of the plasmonic tip. Furthermore, we experimentally demonstrate a concept of a 2-trit nano-excitonic transistor, which can provide a technical basis for processing the massive amounts of data generated by emerging artificial intelligence technologies.
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