Electronic/Optoelectronic Memory Device Enabled by Tellurium-based 2D van der Waals Heterostructure for in-Sensor

Jiajia Zha1,2, Shuhui Shi3,4, Apoorva Chaturvedi5

  • 1Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, 999077, P. R. China.

Summary

Researchers developed a novel 2D material memory device for optoelectronic reservoir computing. This device exhibits both short-term and long-term memory, enabling in-sensor processing of optical signals.