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Updated: Aug 8, 2025

Probe Type II Band Alignment in One-Dimensional Van Der Waals Heterostructures Using First-Principles Calculations
Published on: October 12, 2019
Phase Instability in van der Waals In2 Se3 Determined by Surface Coordination
Shanru Yan1, Chao Xu1, Cenchen Zhong1
1Department of Applied Physics, Research Institute for Smart Energy, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, P.R. China.
Instability in 2D indium selenide (In2Se3) arises from its octahedral coordination and edge defects, leading to moisture- and oxygen-facilitated oxidation. This oxidation forms a self-passivating layer, limiting degradation in ambient conditions.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Two-dimensional (2D) van der Waals In2Se3 exhibits room-temperature ferroelectricity/antiferroelectricity, even at monolayer thickness.
- The stability and degradation pathways of 2D In2Se3 remain insufficiently understood, hindering device applications.
Purpose of the Study:
- To investigate the phase instability and degradation mechanisms of 2D In2Se3.
- To elucidate the role of environmental factors and intrinsic material properties in In2Se3 stability.
Main Methods:
- Combined experimental and theoretical approaches were employed.
- Analysis focused on the octahedral coordination and edge structures of In2Se3.
- Investigated oxidation processes in air under various conditions (moisture, oxygen, light).
Main Results:
- Phase instability in both α- and β'-In2Se3 is linked to unstable octahedral coordination and broken bonds at edge steps.
- Moisture and oxygen facilitate the oxidation of In2Se3 in air, forming amorphous In2Se3-3xO3x layers and Se particles.
- Oxidation is promoted by light and self-passivates to a few nanometer thickness due to the In2Se3-3xO3x layer.
Conclusions:
- The inherent instability of In2Se3, particularly its coordination and edge structure, contributes to its degradation.
- Environmental factors like moisture, oxygen, and light accelerate oxidation, but a self-passivation mechanism limits the extent of degradation.
- Understanding these mechanisms is crucial for optimizing 2D In2Se3 for future electronic and spintronic device applications.
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