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Updated: Aug 7, 2025

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

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Published on: November 24, 2016

Principles for 2D-Material-Assisted Nitrides Epitaxial Growth.

Qi Chen^1,2, Kailai Yang^1,2, Bo Shi^1,2

¹Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China.

Advanced Materials (Deerfield Beach, Fla.)

|March 10, 2023

Summary

This summary is machine-generated.

Two-dimensional (2D) materials guide nitride epitaxy by altering interface interactions. This research clarifies how substrate type influences atomic bonding, enabling controlled growth of high-quality nitride films for advanced semiconductor integration.

Keywords:

2D materials nitrides remote epitaxy van der Waals epitaxy

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Published on: June 25, 2020

Area of Science:

Materials Science
Solid State Physics
Nanotechnology

Background:

Traditional heteroepitaxy faces limitations in advanced material integration.
Understanding the fundamental principles of 2D-materials-assisted epitaxy for nitrides is crucial for progress.

Purpose of the Study:

To theoretically establish and experimentally confirm the crystallographic information at nitride/2D material interfaces.
To elucidate the influence of substrate nature on interface atomic interactions and epilayer quality.
To develop strategies for high-quality 2D-material-assisted nitride epitaxy.

Main Methods:

Theoretical modeling of nitride/2D material interfaces.
Experimental verification of interface properties.
Epitaxial growth of nitrides on different substrates assisted by 2D materials (graphene, WS2).

Main Results:

Atomic interactions at nitride/2D material interfaces depend on the substrate: covalent-like on single-crystalline substrates and van der Waals-like on amorphous substrates.
Nitrides grown on graphene (amorphous substrate) resulted in polycrystalline films.
High-quality single-crystalline Gallium Nitride (GaN) films were successfully grown on WS2 (2D material).

Conclusions:

The nature of the underlying substrate dictates the interface characteristics and subsequent epilayer quality in 2D-material-assisted epitaxy.
Tailoring the growth-front construction by selecting appropriate 2D materials and substrates is key for achieving high-quality nitride films.
This work provides a pathway for advanced semiconductor heterointegration using 2D-material-assisted epitaxy.