Related Experiment Video
Updated: Aug 7, 2025

Growth and Electrostatic/chemical Properties of Metal/LaAlO3/SrTiO3 Heterostructures
Published on: February 8, 2018
A Study of Al2O3/MgO Composite Films Deposited by FCVA for Thin-Film Encapsulation
Heng Yuan1,2, Yifan Zhang1,2, Qian Li1,2
1College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875, China.
Abstract:
Al2O3 and MgO composite (Al2O3/MgO) films were rapidly deposited at low temperatures using filtered cathode vacuum arc (FCVA) technology, aiming to achieve good barrier properties for flexible organic light emitting diodes (OLED) thin-film encapsulation (TFE). As the thickness of the MgO layer decreases, the degree of crystallinity decreases gradually. The 3:2 Al2O3:MgO layer alternation type has the best water vapor shielding performance, and the water vapor transmittance (WVTR) is 3.26 × 10-4 g·m-2·day-1 at 85 °C and 85% R.H, which is about 1/3 of that of a single layer of Al2O3 film. Under the action of ion deposition, too many layers will cause internal defects in the film, resulting in decreased shielding ability. The surface roughness of the composite film is very low, which is about 0.3-0.5 nm depending on its structure. In addition, the visible light transmittance of the composite film is lower than that of a single film and increases with the increase in the number of layers.
More Related Videos
06:49Radio Frequency Magnetron Sputtering of GdBa2Cu3O7âˆ'ÃŽ ´/ La0.67Sr0.33MnO3 Quasi-bilayer Films on SrTiO3 STO Single-crystal Substrates
Published on: April 12, 2019
06:00Solvothermal Synthesis of MIL-96 and UiO-66-NH2 on Atomic Layer Deposited Metal Oxide Coatings on Fiber Mats
Published on: June 13, 2018