Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

416
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
416
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

297
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
297
Switching of BJT01:22

Switching of BJT

476
Switching behavior in Bipolar Junction Transistors (BJTs) is a fundamental aspect utilized in various electronic circuits, particularly for digital logic applications like switches and amplifiers. In a typical switching circuit, a BJT alternates between cut-off and saturation modes, corresponding to the "off" and "on" states, respectively, thus behaving like an ideal switch.
Cut-off Mode ("Off" State): In this state, both the emitter-base and collector-base junctions are...
476
MOSFET01:16

MOSFET

529
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
529
Field Effect Transistor01:29

Field Effect Transistor

503
Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
503
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

421
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
421

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

4K Self-Rectifying Resistive Memory Crossbar Array for Reliable Pattern Recognition.

ACS nano·2026
Same author

Explainable VQA-based ladder safety monitoring for fall-risk prevention on construction sites.

Journal of safety research·2026
Same author

Direct Observation of Conduction Mechanism in Te-Based Selector-Only Memory via Low-Frequency Noise Characterization.

Nano letters·2026
Same author

Sterilization efficacy of a warm-air circulation system in a vaporized hydrogen peroxide sterilizer.

PloS one·2026
Same author

Targeted amplification of alternating electric fields using ferroelectric nanoparticles.

npj biomedical innovations·2026
Same author

A tellurium-free GeSbSe thin film for reliable selector-only memory operation.

Materials horizons·2026

Related Experiment Video

Updated: Aug 7, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.1K

Highly Reliable Ovonic Threshold Switch with TiN/GeTe/TiN Structure.

Dongjun Seong1, Su Yeon Lee1, Hyun Kyu Seo1

  • 1Artificial Intelligence Convergence Research Lab, Sahmyook University, Seoul 01795, Republic of Korea.

Materials (Basel, Switzerland)
|March 11, 2023
PubMed
Summary
This summary is machine-generated.

A novel ovonic threshold switch (OTS) using TiN/GeTe/TiN effectively suppresses sneak currents in neuromorphic memory systems. This advancement addresses key challenges in next-generation computing architectures.

Keywords:
1S1RReRAMcrossbar arrayovonic threshold switching

More Related Videos

In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices
09:26

In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices

Published on: June 26, 2015

8.8K
Sensing of Barrier Tissue Disruption with an Organic Electrochemical Transistor
11:17

Sensing of Barrier Tissue Disruption with an Organic Electrochemical Transistor

Published on: February 10, 2014

11.8K

Related Experiment Videos

Last Updated: Aug 7, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.1K
In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices
09:26

In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices

Published on: June 26, 2015

8.8K
Sensing of Barrier Tissue Disruption with an Organic Electrochemical Transistor
11:17

Sensing of Barrier Tissue Disruption with an Organic Electrochemical Transistor

Published on: February 10, 2014

11.8K

Area of Science:

  • Materials Science
  • Computer Engineering
  • Electrical Engineering

Background:

  • The von Neumann architecture faces power and latency issues, necessitating new computing paradigms.
  • Neuromorphic memory systems offer potential for efficient digital information processing.
  • Crossbar arrays (CAs) are fundamental to neuromorphic systems but suffer from sneak current issues.

Purpose of the Study:

  • To evaluate the electrical characteristics of a TiN/GeTe/TiN ovonic threshold switch (OTS).
  • To assess the OTS's suitability as a selector in crossbar arrays for neuromorphic applications.
  • To investigate the impact of sneak current on memory cell misoperation and explore OTS solutions.

Main Methods:

  • Fabrication of a TiN/GeTe/TiN device structure.
  • Characterization of the device's nonlinear DC I-V properties.
  • Assessment of device endurance using burst read measurements.
  • Evaluation of thermal stability and structural integrity up to 300 °C.

Main Results:

  • The TiN/GeTe/TiN OTS demonstrated highly nonlinear DC I-V characteristics.
  • The device exhibited excellent endurance exceeding 10^9 cycles.
  • A stable threshold voltage below 15 mV/decade was observed.
  • Good thermal stability and retention of amorphous structure were confirmed below 300 °C.

Conclusions:

  • The TiN/GeTe/TiN OTS is a promising selector for mitigating sneak current in crossbar arrays.
  • The device's properties support its application in advanced neuromorphic memory systems.
  • This research contributes to overcoming critical obstacles in next-generation computer architectures.