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Direct Observation of Conduction Mechanism in Te-Based Selector-Only Memory via Low-Frequency Noise Characterization.

Dongbin Kim1, Joonhyeok Choi1, Hyun Kyu Seo2,3

  • 1Department of Electronic Engineering, Hanyang University, Seoul 04763, Republic of Korea.

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Summary

Selector-only memory (SOM) devices utilize ovonic threshold switches for dense memory. This study reveals that Te redistribution and Te-Te dimer defects govern off-state conduction and threshold voltage modulation in these memory devices.

Keywords:
Low-frequency noiseOvonic threshold switchSelector-only memoryTe-based chalcogenide

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Area of Science:

  • Materials Science
  • Solid-State Electronics
  • Device Physics

Background:

  • Selector-only memory (SOM) integrates selector and memory functions in two-terminal devices, crucial for dense cross-point memory architectures.
  • The precise physical mechanisms behind off-state conduction and threshold voltage (Vth) modulation in SOMs remain incompletely understood.
  • Ovonic threshold switches (OTS) are a key technology for SOMs, but their operational physics requires further elucidation.

Purpose of the Study:

  • To investigate the underlying physical mechanisms of off-state conduction and threshold voltage (Vth) modulation in Te-rich Ge-Sb-Se-Te:Sn SOM devices.
  • To correlate electrical transport properties, low-frequency noise (LFN), and materials characterization to elucidate SOM device physics.
  • To establish a unified mechanism explaining Vth modulation in Te-based SOMs.

Main Methods:

  • DC I-V characterization analyzed with Poole-Frenkel (PF) emission and trap-assisted tunneling (TAT) models.
  • Low-frequency noise (LFN) measurements to differentiate conduction regimes and observe state-dependent noise.
  • Materials analysis including cross-sectional energy-dispersive X-ray spectroscopy (EDS) and ab initio calculations.

Main Results:

  • Identical trap energy levels were observed across different Vth states, suggesting a common trap species with state-dependent spatial redistribution.
  • LFN measurements successfully distinguished between PF- and TAT-dominated conduction regimes, showing consistent state-dependent noise behavior.
  • Electric-field-polarity-dependent Te redistribution near the top electrode was identified, and Te-Te dimer defects were confirmed as acceptor-like deep traps responsible for off-state conduction.

Conclusions:

  • A unified mechanism for Vth modulation in Te-based SOM devices has been established, linking Te redistribution and specific defect states to device performance.
  • The findings clarify the roles of Poole-Frenkel emission and trap-assisted tunneling in off-state conduction.
  • This research provides critical insights for the design and optimization of future dense memory technologies based on ovonic threshold switches.