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Temperature Evolution of Two-State Lasing in Microdisk Lasers with InAs/InGaAs Quantum Dots
Ivan Makhov1, Konstantin Ivanov1, Eduard Moiseev1
1International Laboratory of Quantum Optoelectronics, HSE University, Soyuza Pechatnikov Str., 16, St. Petersburg 190008, Russia.
Nanomaterials (Basel, Switzerland)
|March 11, 2023
Summary
Ground-state lasing in quantum dot microdisk lasers weakens with temperature, disappearing above a critical point. Two-state lasing onset shifts, narrowing the pure one-state lasing range as temperature rises.
Area of Science:
- Optoelectronics
- Semiconductor Lasers
- Quantum Dot Physics
Background:
- Microdisk lasers utilizing Stranski-Krastanow InAs/InGaAs/GaAs quantum dots are crucial optoelectronic devices.
- Understanding temperature-dependent lasing characteristics is vital for device performance and stability.
- Quantum dot lasers exhibit unique properties influenced by temperature, affecting threshold current and lasing states.
Purpose of the Study:
- To investigate the temperature dependence of one-state and two-state lasing in quantum dot microdisk lasers.
- To analyze the impact of temperature on threshold current density and lasing wavelength.
- To determine the critical temperature for ground-state lasing quenching and its relation to microdisk size.
Main Methods:
- Experimental characterization of microdisk lasers across a range of temperatures.
- Numerical simulations employing a rate equation model including free carrier absorption.
- Analysis of threshold current density, lasing state transitions, and wavelength shifts as a function of temperature and microdisk diameter.
Main Results:
- Ground-state threshold current density increases with temperature, with a characteristic temperature of ~150 K near room temperature, followed by super-exponential growth at higher temperatures.
- The onset current density for two-state lasing decreases with increasing temperature, narrowing the pure one-state lasing regime.
- Ground-state lasing is quenched above a critical temperature, which decreases with smaller microdisk diameters (from 107 °C to 37 °C for 28 μm to 20 μm disks). A 9 μm disk showed a temperature-induced jump from first to second excited-state lasing.
Conclusions:
- The developed rate equation model accurately predicts the experimental temperature-dependent behavior of quantum dot microdisk lasers.
- Ground-state lasing quenching is strongly dependent on microdisk size and can be approximated by linear functions of saturated gain and output loss.
- Temperature management and device design are critical for optimizing the operational range and stability of quantum dot microdisk lasers.
