Polyimide/crown ether composite film with low dielectric constant and low dielectric loss for high signal...

Dielectric properties of polyimide (PI) are constrained by its inherent molecular structure and inter-chain packing capacities. The compromised dielectric properties of PI, however, could be rescued by introducing trifluoromethyl and forming a host-guest inclusion complex with the introduction of crown ethers (CEs). Herein, we report PI/crown ether composite films as a communication substrate that could be applied under high frequency circumstances. In this work, three kinds of bisphenol A-containing diamine (2,2'-bis[4-(4-aminophenoxy)phenyl]propane, 2,2-bis[4-(2-methyl-4-aminophenoxy)phenyl]propane, and 2,2-bis[4-(2-trifluoro methyl-4-aminophenoxy)phenyl]propane) are synthesized and polymerized with 4,4'-(hexafluoroisopropylidene)diphthalic anhydride to prepare low-dielectric PI films by means of thermal imidization. Crown ethers are introduced into the PI with different mass fractions to obtain three series of PI films. Following the combination of trifluoromethyl into the molecular chain of PI, high frequency dielectric loss of modified PI films can be effectively reduced. The properties of these materials (especially the dielectric properties) are thoroughly explored by crown ether addition. The results show that the crown ether addition process can offer crown ethers with increased free volume of PI matrix, thus allowing them to generate a special necklace-like supramolecular structure, which makes the crown ether disperse more uniformly in the PI matrix, resulting in improved dielectric properties. Importantly, the dielectric constant and dielectric loss of the composite films at high frequencies are remarkably reduced to 2.33 and 0.00337, respectively. Therefore, these composite films are expected to find extensive use as a 5G communication substrate at high frequencies in the future.