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Atomic Absorption Spectroscopy: Interference01:25

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Interference leads to systematic error in atomic absorption (AA) measurements by enhancing or diminishing the analytical signal or the background. These interferences can be grouped into three main categories: spectral interference, chemical interference, and physical interference.
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Direct alkylation of ammonia produces polyalkylated amines, along with a quaternary ammonium salt. To exclusively prepare primary amines, the azide synthesis method can be used.
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Alkylation is one of the methods used to prepare amines. Direct alkylation of ammonia or a primary amine with an alkyl halide gives polyalkylated amines along with a quaternary ammonium salt through successive SN2 reactions. This process of making the quaternary salt through the direct alkylation method is called exhaustive alkylation.
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Direct alkylation is not a suitable method for synthesizing amines because it produces polyalkylated products. Gabriel synthesis is the most preferred method to exclusively make primary amines. The method uses phthalimide, which contains a protected form of nitrogen that participates in alkylation only once to predominantly give primary amines.
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Computational Investigation of Precursor Blocking during Area-Selective Atomic Layer Deposition Using Aniline as a

I Tezsevin1, J F W Maas1, M J M Merkx1

  • 1Department of Applied Physics, Eindhoven University of Technology, Post Office Box 513, 5600 MB Eindhoven, Netherlands.

Langmuir : the ACS Journal of Surfaces and Colloids
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Summary

Aniline effectively blocks TiN deposition on Ru and Co surfaces by forming dense inhibitor layers, enabling selective growth on SiO2. This study uses DFT and RSA simulations to understand aniline

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Area of Science:

  • Materials Science
  • Surface Chemistry
  • Nanotechnology

Background:

  • Area-selective atomic layer deposition (ASD) is crucial for advanced semiconductor manufacturing.
  • Identifying effective small-molecule inhibitors (SMIs) for high selectivity is a significant challenge.
  • Aniline has emerged as a promising SMI for TiN deposition on SiO2 over Ru and Co.

Purpose of the Study:

  • To investigate the mechanism by which aniline acts as an effective SMI in TiN ASD.
  • To understand the selective adsorption and blocking behavior of aniline on different surfaces.
  • To elucidate the role of adsorption configurations and surface reactions in achieving selective deposition.

Main Methods:

  • Density Functional Theory (DFT) calculations to study aniline adsorption and precursor interactions.
  • Random Sequential Adsorption (RSA) simulations to model surface coverage and inhibitor layer formation.
  • Analysis of adsorption energies, configurations, and precursor binding affinities.

Main Results:

  • DFT confirmed selective aniline adsorption on Ru and Co (chemisorption) versus SiO2 (physisorption).
  • Two stable aniline adsorption configurations on metal surfaces were identified, leading to dense inhibitor layers via RSA.
  • Aniline significantly reduced Ti precursor interaction with non-growth metal areas, with potential roles for hydrogenolysis.

Conclusions:

  • Aniline effectively inhibits TiN precursor adsorption on Ru and Co surfaces through dense layer formation and chemical interactions.
  • The study provides fundamental insights into SMI behavior for advanced area-selective atomic layer deposition.
  • This work paves the way for improved industrial applications of selective deposition techniques.