Related Experiment Video
Updated: Aug 6, 2025

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology
Published on: December 7, 2015
Regulated Thermal Boundary Conductance between Copper and Diamond through Nanoscale Interfacial Rough Structures
Ziyang Wang1, Fangyuan Sun1, Zihan Liu1
1School of Energy and Environmental Engineering, University of Science and Technology Beijing, Beijing 100083, China.
Abstract:
Interfacial structure optimization is important to enhance the thermal boundary conductance (TBC) as well as the overall performance of thermal conductive composites. In this work, the effect of interfacial roughness on the TBC between copper and diamond is investigated with molecular dynamics (MD) simulations and time-domain thermoreflectance (TDTR) experiments. It is found from MD simulations that the thermal transport efficiency across a rough interface is higher, and the TBC can be improved 5.5 times to 133 MW/m2·K compared with that of the flat interface. Also, the TBC is only dominated by the actual contact area at the interface for larger roughness cases; thus, we conclude that the phonon scattering probability increases with the increase of roughness and becomes stable gradually. Finally, the TBC of the copper/diamond interface with different roughness is characterized by TDTR experiments, and the results also confirm the trend of MD simulations. This study demonstrates the feasibility of the roughness modification for interfacial thermal management from both theoretical analysis and experimental measurements and provides a new idea for enhancing the thermal conductivity of composites.
Related Concept Videos
Boundary Conditions for Current Density
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...

