Modifying the Power and Performance of 2-Dimensional MoS₂ Field Effect Transistors

Area of Science:

• Materials Science
• Electrical Engineering
• Solid-State Physics

Background:

• The semiconductor industry has driven information technology advancements for 60 years, leading to integrated circuits, AI, and IoT.
• Current semiconductor technology scales to sub-5nm nodes, optimizing performance, power, area, and cost.
• Two-dimensional (2D) semiconductors are emerging as a key solution to overcome limitations in conventional transistor scaling.

Purpose of the Study:

• To review the evolution of transistors and highlight the potential of 2D semiconductors.
• To explore 2D semiconductors as a viable alternative beyond scaled metal-oxide-semiconductor field-effect transistors.
• To prospect the future semiconductor technology roadmap based on 2D semiconductor advancements.

Main Methods:

• Focus on optimization strategies for key parameters: mobility (μ), equivalent oxide thickness (EOT), and contact resistance (R).
• Analysis of how these optimizations enable high ON current (I) and reduced driving voltage (V).
• Review of technological developments in 2D semiconductors over the past decade.

Main Results:

• Significant progress in 2D semiconductor material, processing, and integration has been achieved.
• Optimization of mobility, EOT, and contact resistance is crucial for high-performance 2D transistors.
• 2D semiconductors are nearing practical application, demonstrating potential to surpass current technologies.

Conclusions:

• 2D semiconductors represent a critical technological option for future electronic devices.
• Continued research and development in 2D materials and device engineering are essential.
• The findings provide a roadmap for the next generation of semiconductor technology.