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Layer-resolved electronic behavior in a Kondo lattice system, CeAgAs2
Sawani Datta1, Ram Prakash Pandeya1, Arka Bikash Dey2
1Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Homi Bhabha Road, Colaba, Mumbai 400005, India.
We explored the electronic structure of the antiferromagnetic Kondo lattice system CeAgAs2 using hard X-ray photoemission spectroscopy. Our findings reveal significant surface-bulk differences and complex electronic interactions within this novel material.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Spectroscopy
Background:
- CeAgAs2 is an orthorhombic variant of the HfCuSi2 structure.
- It exhibits an antiferromagnetic ground state, Kondo-like resistivity upturn, and magnetic moment compensation at low temperatures.
Purpose of the Study:
- To investigate the electronic structure of the antiferromagnetic Kondo lattice system CeAgAs2.
- To understand the surface-bulk electronic differences and the role of hybridization and electron correlation.
Main Methods:
- Hard X-ray photoemission spectroscopy (HAXPES) was employed.
- Depth-resolved measurements were performed at varying photon energies.
Main Results:
- Significant surface-bulk differences were observed in As and Ce core-level spectra.
- Strong Ce-As hybridization and electron correlation were identified.
- Temperature-dependent changes in spectral weight transfer and Fermi level intensity were consistent with Kondo behavior.
Conclusions:
- The study reveals distinct electronic structures between the surface and bulk of CeAgAs2.
- Complex interplay of intra- and inter-layer covalency and electron correlation influences the electronic properties.
- These findings provide insights into the novel Kondo lattice system CeAgAs2.
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