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Related Concept Videos

Bipolar Junction Transistor01:22

Bipolar Junction Transistor

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Bipolar Junction Transistors (BJTs) are essential elements in electronic circuits, playing a crucial role in the functionality of amplifiers, memories, and microprocessors. These transistors can be designed as NPN or PNP based on their doping patterns. They consist of three layers: the emitter, base, and collector. The configuration of these layers and their respective doping levels—with N-type or P-type impurities—define the transistor's type and its operational...
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Field Effect Transistor01:29

Field Effect Transistor

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Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
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Switching of BJT01:22

Switching of BJT

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Switching behavior in Bipolar Junction Transistors (BJTs) is a fundamental aspect utilized in various electronic circuits, particularly for digital logic applications like switches and amplifiers. In a typical switching circuit, a BJT alternates between cut-off and saturation modes, corresponding to the "off" and "on" states, respectively, thus behaving like an ideal switch.
Cut-off Mode ("Off" State): In this state, both the emitter-base and collector-base junctions are...
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Modes of Operations of BJT01:21

Modes of Operations of BJT

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A Bipolar Junction Transistor (BJT) is a versatile component in electronics, functioning in four distinct modes based on the biasing of its junctions: active, saturation, cut-off, and inverted modes.
Active Mode: The most common mode for amplification, the active mode features a forward-biased emitter-base junction and a reverse-biased base-collector junction. This setup enables electrons to be injected from the emitter to the base while blocking the majority carriers at the collector. The...
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Configurations of BJT01:16

Configurations of BJT

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Bipolar Junction Transistors (BJTs) are categorized into various types based on their configurations, each with distinct characteristics and applications. The configurations are primarily differentiated by which terminal—base, emitter, or collector—is common to both the input and output circuits.
The common base configuration is noted for its high voltage gain, positioning it as an ideal choice for single-stage amplifier circuits, such as microphone pre-amplifiers. A notable...
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BJT Amplifiers01:14

BJT Amplifiers

537
Bipolar Junction Transistors (BJTs) are pivotal components in amplifier circuits, functioning as voltage-controlled current sources in their active region. This characteristic allows them to efficiently control the collector current through variations in the base-emitter voltage. Essentially, BJTs amplify power due to their ability to take a weak input signal and output a much stronger signal.
In BJT amplifier configurations, particularly in common-emitter setups, the transistor's role...
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Updated: Aug 6, 2025

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
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Ballistic two-dimensional InSe transistors.

Jianfeng Jiang1, Lin Xu1, Chenguang Qiu2

  • 1Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing, China.

Nature
|March 23, 2023
PubMed
Summary
This summary is machine-generated.

Two-dimensional indium selenide field-effect transistors (FETs) achieve record performance, surpassing silicon limits. These novel 2D FETs operate at lower voltages and offer superior characteristics for future electronics.

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Semiconductor Physics

Background:

  • Silicon-based metal-oxide-semiconductor (MOS) field-effect transistors (FETs) face scaling limitations, with gate length nearing 12 nm and supply voltage not decreasing below 0.6 V.
  • Two-dimensional (2D) layered semiconductors are explored as alternatives for miniaturization, but none have surpassed current silicon FET performance.
  • The International Roadmap for Devices and Systems (IRDS) highlights the need for advanced materials to overcome silicon's end-of-scaling challenges.

Purpose of the Study:

  • To investigate the potential of 2D indium selenide (InSe) as a channel material for next-generation FETs.
  • To develop fabrication methods for high-performance InSe FETs with improved characteristics.
  • To demonstrate InSe FETs that surpass the performance of state-of-the-art silicon FETs.

Main Methods:

  • Fabrication of FETs using 2D InSe as the channel material.
  • Development of an yttrium-doping-induced phase-transition method for creating ohmic contacts with InSe.
  • Scaling of InSe FETs to a channel length of 10 nm and characterization of their electrical properties.

Main Results:

  • Achieved record transconductance of 6 mS μm⁻¹ and a high room-temperature ballistic ratio of 83% in InSe FETs.
  • Demonstrated operation at a low supply voltage of 0.5 V, surpassing the predicted silicon limit.
  • Successfully suppressed short-channel effects with a low subthreshold swing (SS) of 75 mV/decade and DIBL of 22 mV/V.
  • Extracted low contact resistance of 62 Ω μm in 10-nm ballistic InSe FETs, leading to a significantly lower energy-delay product (EDP).

Conclusions:

  • 2D InSe is a promising channel material capable of surpassing the performance of silicon FETs.
  • The developed fabrication technique enables high-performance, scaled-down InSe FETs with excellent electrical properties.
  • InSe FETs offer a pathway to overcome the limitations of silicon scaling, enabling more energy-efficient integrated electronics.