Near-Sensor Reservoir Computing for Gait Recognition via a Multi-Gate Electrolyte-Gated Transistor

Xuerong Liu1,2, Cui Sun1,2, Zhecheng Guo3

  • 1CAS Key Laboratory of Magnetic Materials and Devices, and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China.

Summary

This study introduces a novel electrolyte-gated transistor (EGT) for near-sensor computing in wearable electronics. This technology efficiently processes motion and physiological data directly on the device, reducing latency and energy use.