Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Bipolar Junction Transistor01:22

Bipolar Junction Transistor

836
Bipolar Junction Transistors (BJTs) are essential elements in electronic circuits, playing a crucial role in the functionality of amplifiers, memories, and microprocessors. These transistors can be designed as NPN or PNP based on their doping patterns. They consist of three layers: the emitter, base, and collector. The configuration of these layers and their respective doping levels—with N-type or P-type impurities—define the transistor's type and its operational...
836
Field Effect Transistor01:29

Field Effect Transistor

500
Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
500
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

417
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
417
Types of Semiconductors01:20

Types of Semiconductors

691
Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
691
Semiconductors01:22

Semiconductors

758
There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
758
Biasing of FET01:22

Biasing of FET

333
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
333

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Gradient-distributed metal-halide dynamic memristors for adaptive and robust voiceprint recognition.

Nature communications·2026
Same author

Full vision adaptation in mixed-light conditions enabled by dynamic water adsorption/desorption.

Nature communications·2026
Same author

Internal electric field-driven interfacial charge transfer and enhanced photocatalytic hydrogen evolution in ZnWO<sub>4</sub>/Mn<sub>0.2</sub>Cd<sub>0.8</sub>S S-scheme heterojunction.

Journal of colloid and interface science·2026
Same author

Synergistic sulfur vacancies and Schottky junctions boost charge separation for efficient photocatalytic hydrogen production.

Journal of colloid and interface science·2026
Same author

Intelligent optoelectronics and electronics based on electrospinning technology.

Chemical Society reviews·2026
Same author

Intrinsic gradient oxygen-driven second-order memristors for continual reinforcement learning.

Nature communications·2026
Same journal

Current status of room temperature magnetic compensation in impurity-doped Mn<sub>4</sub>N epitaxial thin films.

Science and technology of advanced materials·2026
Same journal

Group 8 metallocenes as single-source precursors for the synthesis of light-element-stabilized FCC phases under extreme conditions.

Science and technology of advanced materials·2026
Same journal

Reproducible chiroptical activity from aggregated chiral thienopyrroledione-fluorene π‑conjugated polymers.

Science and technology of advanced materials·2026
Same journal

Wet etching of (-102) β-Ga<sub>2</sub>O<sub>3</sub> with tetramethylammonium hydroxide (TMAH).

Science and technology of advanced materials·2026
Same journal

A novel approach to micro-fabricated thermoelectric generators with SrTiO<sub>3</sub>.

Science and technology of advanced materials·2026
Same journal

Probing the Hall anomaly and electronic structure in kagome metal RbV<sub>3</sub>Sb<sub>5</sub> under hydrostatic pressure.

Science and technology of advanced materials·2026
See all related articles

Related Experiment Video

Updated: Aug 5, 2025

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
08:07

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Published on: March 9, 2019

7.9K

Pseudo-transistors for emerging neuromorphic electronics.

Jingwei Fu1, Jie Wang1, Xiang He1

  • 1State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, China.

Science and Technology of Advanced Materials
|March 27, 2023
PubMed
Summary
This summary is machine-generated.

This review explores pseudo-transistors for neuromorphic electronics, highlighting their potential to overcome limitations of current artificial synaptic devices like memristors and transistors.

Keywords:
Neuromorphic computingartificial synapsemulti-terminalnon-volatile memorypseudo-transistor

More Related Videos

Translating Extracellular Electron Transfer Activities with Organic Electrochemical Transistors
10:44

Translating Extracellular Electron Transfer Activities with Organic Electrochemical Transistors

Published on: January 31, 2025

744
Bidirectional Electrical and Optoelectronic Interfaces in Healthy and Ischemic Ex Vivo Rat Hearts
08:40

Bidirectional Electrical and Optoelectronic Interfaces in Healthy and Ischemic Ex Vivo Rat Hearts

Published on: July 18, 2025

136

Related Experiment Videos

Last Updated: Aug 5, 2025

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
08:07

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Published on: March 9, 2019

7.9K
Translating Extracellular Electron Transfer Activities with Organic Electrochemical Transistors
10:44

Translating Extracellular Electron Transfer Activities with Organic Electrochemical Transistors

Published on: January 31, 2025

744
Bidirectional Electrical and Optoelectronic Interfaces in Healthy and Ischemic Ex Vivo Rat Hearts
08:40

Bidirectional Electrical and Optoelectronic Interfaces in Healthy and Ischemic Ex Vivo Rat Hearts

Published on: July 18, 2025

136

Area of Science:

  • Neuromorphic electronics
  • Materials science
  • Device physics

Background:

  • Artificial synaptic devices are crucial for neuromorphic computing.
  • Existing devices like memristors and transistors have limitations in stability and integration.
  • There is a need for advanced artificial synapse solutions.

Purpose of the Study:

  • To review recent advances in pseudo-transistor-based neuromorphic electronics.
  • To discuss the working mechanisms, device structures, and materials of key pseudo-transistors.
  • To highlight future directions and challenges in the field.

Main Methods:

  • Comprehensive review of recent literature on pseudo-transistors.
  • Analysis of device configurations, including tunneling random access memory (TRAM), memflash, and memtransistor.
  • Discussion of material properties and operational principles.

Main Results:

  • Pseudo-transistors combine advantages of memristors and transistors for improved artificial synapses.
  • Three types of pseudo-transistors (TRAM, memflash, memtransistor) show promise.
  • These devices offer potential for more stable and easily integrated neuromorphic systems.

Conclusions:

  • Pseudo-transistors represent a significant advancement in artificial synaptic devices.
  • Further research is needed to address challenges and optimize performance for practical applications.
  • This technology paves the way for more efficient and scalable neuromorphic computing.