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Low-Temperature Transient Liquid Phase Bonding Technology via Cu Porous-Sn58Bi Solid-Liquid System under Formic Acid
Siliang He1,2, Bifu Xiong1, Fangyi Xu1
1Guangxi Education Department Key Laboratory of Microelectronic Packaging & Assembly Technology, School of Mechanical & Electrical Engineering, Guilin University of Electronic Technology, Guilin 541004, China.
A novel low-temperature transient liquid phase bonding (TLPB) method using Sn58Bi/porous Cu/Sn58Bi enables high-temperature power device packaging. This process forms high-melting-point intermetallic compounds for robust, high-shear-strength metal joints.
Area of Science:
- Materials Science
- Metallurgical Engineering
- Semiconductor Packaging
Background:
- High-temperature power device packaging requires robust interconnects capable of withstanding demanding operational conditions.
- Traditional bonding methods often involve high temperatures, potentially damaging sensitive semiconductor components.
- Transient Liquid Phase Bonding (TLPB) offers a promising alternative for low-temperature, high-reliability joining.
Purpose of the Study:
- To develop and investigate a low-temperature TLPB method for efficient power device packaging.
- To analyze the formation of intermetallic compounds (IMCs) and their impact on joint strength.
- To optimize bonding parameters, including atmosphere, time, and pressure, for enhanced mechanical performance.
Main Methods:
- Utilized a Sn58Bi/porous Cu/Sn58Bi material system for TLPB.
- Investigated the effects of formic acid (FA) atmosphere on IMC formation (Cu6Sn5 and Cu3Sn).
- Examined the influence of external pressure on joint microstructure and failure modes.
- Performed shear strength testing on the fabricated metal joints.
Main Results:
- The TLPB process successfully formed high-melting-point IMCs, primarily Cu6Sn5 and Cu3Sn, at low bonding temperatures.
- Formic acid atmosphere promoted the formation of desired IMCs at the porous Cu/Sn58Bi interface.
- Applied external pressure (up to 10 MPa) reduced joint thickness and micropores, leading to ductile fracture.
- A joint fabricated at 250 °C for 5 min under 10 MPa exhibited a shear strength of 62.2 MPa.
Conclusions:
- The proposed Sn58Bi/porous Cu/Sn58Bi TLPB method is effective for low-temperature, high-temperature power device packaging.
- Optimized bonding conditions, particularly external pressure, significantly enhance the mechanical properties of the metal joints.
- This TLPB approach offers a viable solution for reliable and efficient power electronics interconnects.
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