The Study of the Reliability of Complex Components during the Electromigration Process

With the increasing number of inputs and outputs, and the decreasing interconnection spacing, electrical interconnection failures caused by electromigration (EM) have attracted more and more attention. The electromigration reliability and failure mechanism of complex components were studied in this paper. The failure mechanism and reliability of complex components during the electromigration process were studied through the simulation and the experiment, which can overcome the limitation of experimental measurement at a micro-scale. The simulation results indicated that the solder joint has obvious current crowding at the current inlet, which will significantly enhance the electromigration effect. Based on the atomic flux divergence method, the void formation of solder joints can be effectively predicted, and life prediction can be more accurate than Black's equation. Experimental results indicated that the resistance of the daisy chain could be significantly increased with the process of void formation in the solder and corrosion of the leads. Moreover, the growth of intermetallic compounds can be obviously promoted under current stress. The main composition of the intermetallic compounds changes from almost entirely Cu₅Sn₆ to Cu₅Sn₆ and Cu₃Sn; the cracks can be detected at the Cu₃Sn layer. Specifically, the mean time to failure is 1065 h under 1.4 A current and 125 °C based on IPC-9701A guidelines.