Design and Implementation of High-Capacity DDR3 Micro-Module Based on 3D TSV Advanced Packaging.

Area of Science:

• Electrical Engineering
• Materials Science
• Computer Engineering

Background:

• Modern electronic systems require miniaturization, lightweight design, and high performance.
• Advanced packaging technologies are crucial for meeting these demands.
• Three-dimensional Through-Silicon Via (3D TSV) technology offers solutions for increased storage capacity in constrained form factors.

Purpose of the Study:

• To propose a schematic design methodology for a four-layer stacked micro-module.
• To develop a system-level integrated modeling approach for wafer-level packaging.
• To demonstrate the feasibility of a compact, high-capacity memory module using heterogeneous integration and 3D TSV.

Main Methods:

• Leveraging heterogeneous chip fan-out technology for diverse chip integration.
• Utilizing TSV-based vertical stacking for three-dimensional integration.
• Implementing a system-level integrated modeling approach for design and validation.
• Fabricating a DDR3 micro-module with specific dimensions and specifications.

Main Results:

• A four-layer stacked DDR3 micro-module with a compact footprint (14 × 9 × 3.5 mm) was successfully fabricated.
• The micro-module achieved a storage capacity of 4 GB and a 64-bit bus width.
• A significant 95% reduction in footprint area compared to conventional board-level mounting was achieved.
• Comprehensive multi-level testing confirmed compliance with standard protocol requirements.

Conclusions:

• The proposed design methodology and modeling approach are effective for creating advanced micro-modules.
• The fabricated DDR3 micro-module represents a paradigm shift in form factors for mobile computing.
• The technology enhances computational density and energy efficiency, benefiting data center server applications.