Investigations of Sidewall Passivation Using the Sol-Gel Method on the Optoelectronic Performance for Blue InGaN
Wenjun Huang1, Xiangyu Miao1, Zhaojun Liu1
1Department of Electronic and Electrical Engineering, Southern University of Science and Technology, Shenzhen 518055, China.
Abstract:
The optoelectronic effects of sidewall passivation on micro-light-emitting diodes (Micro-LEDs) were investigated using sol-gel chemical synthesis. Blue InGaN/GaN multi-quantum well (MQW) Micro-LEDs, ranging in size from 20 × 20 μm to 100 × 100 μm and with high EQE, were fabricated and distinguished by the passivation method used, including no passivation, sol-gel SiO2, and plasma-enhanced chemical vapor deposition (PECVD) SiO2. Impressively, the sol-gel method is advantageous in improving the optoelectronic performance of Micro-LEDs. The fabricated 20 × 20 μm Micro-LEDs showed an EQE of 27.7% with sol-gel passivation, which was a 14% improvement compared to devices without sidewall passivation. Sol-gel sidewall passivation allows Micro-LEDs to effectively achieve sharper edge emission, superior surface luminous uniformity, and intensity, providing the possibility for the fabrication of low-cost and high-efficiency Micro-LEDs.
