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Modeling and Simulation Investigation of Ferroelectric-Based Electrostatic Doping for Tunnelling Field-Effect

Dong Wang1, Hongxia Liu1, Hao Zhang1

  • 1Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi'an 710071, China.

Micromachines
|March 29, 2023
PubMed

Keywords:
TCADelectrostatic dopingferroelectricitypolarity gatetunneling field-effect transistor

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