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In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices
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Analysis and Hardening of SEGR in Trench VDMOS with Termination Structure

Yuan Wang1, Tao Liu1, Lingli Qian1

  • 1School of Microelectronics and Communication Engineering, Chongqing University, Chongqing 400044, China.

Micromachines
|March 29, 2023
PubMed

Keywords:
heavy ionradiation hardnesssingle-event gate-rupture (SEGR)trench VDMOS

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