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Tuning Multiple Landau Quantization in Transition-Metal Dichalcogenide with Strain
Zihao Huang1,2, Guoyu Xian1,2, Xiangbo Xiao1
1Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, PR China.
Nano Letters
|April 4, 2023
Summary
Strain engineering in NiTe2 reveals multiple Landau levels, offering new ways to control topological quantum states. This research enables applications in valleytronics and advanced electronic devices.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Quantum Mechanics
Background:
- Landau quantization is crucial for studying topological quantum states.
- Topological surface states (TSS) in semimetals possess unique electronic properties.
- Strain engineering is a promising method for tuning material properties.
Purpose of the Study:
- To investigate Landau quantization in strained type-II Dirac semimetal NiTe2.
- To explore the effect of strain on topological surface states.
- To demonstrate strain-induced control over quantum states for device applications.
Main Methods:
- Spectroscopic-imaging scanning tunneling microscopy (SI-STM).
- Application of magnetic fields to induce Landau quantization.
- First-principles calculations to model electronic structures.
Main Results:
- Observed single-sequence Landau levels (LLs) on uniform NiTe2 surfaces.
- Revealed multiple sequences of LLs in strained surface regions.
- Demonstrated strain-induced lifting of valley degeneracy in TSS.
Conclusions:
- Strain engineering in NiTe2 allows for the observation of multiple LLs.
- This control over quantum states opens pathways for applications in valleytronics, high-frequency rectifiers, and Josephson diodes.
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