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Silicon Waveguide-Integrated Carbon Nanotube Photodetector with Low Dark Current and 48 GHz Bandwidth
Hongyan Zhao1,2,3, Leijing Yang1,2, Weifeng Wu3
1State Key Laboratory of Information Photonics and Optical Communications and School of Electronic Engineering, Beijing University of Posts and Telecommunications (BUPT), Beijing 100876, China.
ACS Nano
|April 5, 2023
Summary
High-performance waveguide-integrated photodetectors were fabricated using carbon nanotubes (CNTs) and asymmetric electrodes. These devices offer a high 3 dB bandwidth of ~48 GHz, crucial for next-generation optical communications.
Area of Science:
- Optoelectronics
- Materials Science
- Nanotechnology
Background:
- Low-dimensional materials with excellent optoelectronic properties are key for integrated optical systems.
- Carbon nanotubes (CNTs) offer unique advantages like broad band response and high carrier mobility.
Purpose of the Study:
- To demonstrate a high-performance waveguide-integrated photodetector using CNTs.
- To optimize the photodetector structure for enhanced performance.
Main Methods:
- Fabrication of a waveguide-integrated photodetector with asymmetric palladium (Pd) and hafnium (Hf) contact electrodes.
- Device characterization through simulation and experimental validation.
Main Results:
- Achieved a high 3 dB bandwidth of approximately 48 GHz at 0 V bias.
- Obtained a responsivity of ~73.62 mA/W and a low dark current of ~0.157 μA at -2 V bias.
Conclusions:
- The developed CNT photodetector exhibits high bandwidth and low dark current.
- This technology is promising for next-generation optical communication and high-speed optical interconnects.
