Influence of Accidental Impurities on the Spectroscopic and Luminescent Properties of ZnWO4 Crystal
Kirill Subbotin1,2, Anatolii Titov1,2, Victoria Solomatina2,3
1Prokhorov General Physics Institute of the Russian Academy of Sciences, 119991 Moscow, Russia.
Abstract:
Special techniques for deep purification of ZnO and WO3 have been developed in this work. A ZnWO4 single crystal has been grown by the Czochralski method using purified ZnO and WO3 chemicals, along with the ZnWO4 crystal-etalon, which has been grown at the same conditions using commercially available 5N ZnO and WO3 chemicals. The actual accidental impurities compositions of both the initial chemicals and the grown crystals have been measured by inductively coupled plasma mass-spectrometry. A complex of comparative spectroscopic studies of the crystals has been performed, including optical absorption spectra, photo-, X-ray-, and cathodoluminescence spectra and decay kinetics, as well as the photoluminescence excitation spectra. The revealed differences in the measured properties of the crystals have been analyzed in terms of influence of the accidental impurities on these properties.
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