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The Generation of Higher-order Laguerre-Gauss Optical Beams for High-precision Interferometry

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Inverse LGAD (iLGAD) Periphery Optimization for Surface Damage Irradiation.

Albert Doblas¹, David Flores¹, Salvador Hidalgo¹

¹Centro Nacional de Microelectrónica, IMB-CNM-CSIC, 08193 Barcelona, Spain.

Sensors (Basel, Switzerland)

|April 13, 2023

Summary

Inverse LGADs offer improved fill factors for particle detectors. This study optimized iLGAD sensors for radiation environments, showing good electrical performance after X-ray irradiation.

Keywords:

LGAD X-ray detectors fast detectors low energy X-ray radiation-hard detectors silicon

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Area of Science:

High-energy physics instrumentation
Semiconductor device physics

Background:

Pixelated Low-Gain Avalanche Diodes (LGADs) are standard for High Granularity Timing Detector (HGTD) and Endcap Timing Layer (ETL) detectors.
LGAD segmentation causes a non-gain area, reducing the fill factor.

Purpose of the Study:

To explore inverse LGAD (iLGAD) sensors for surface damage irradiation.
To develop and optimize a new generation of iLGADs for enhanced performance in irradiated environments.

Main Methods:

Fabrication of a new generation of iLGAD sensors with optimized peripheries.
Electrical characterization of iLGAD sensors before and after X-ray irradiation.

Main Results:

The fabricated iLGAD sensors demonstrated good electrical performance.
Performance was maintained even after X-ray irradiation, indicating radiation hardness.

Conclusions:

Optimized iLGADs show promise for use in radiation-intensive environments.
iLGAD technology offers a viable solution to improve fill factor and tracking capabilities in particle detectors.