Related Experiment Video
Updated: Jun 28, 2026

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology
Published on: December 7, 2015
The Effects of High-Energy Carbon Co-Doping on IMB-CNM LGAD Fabrication and Performance
Jairo Villegas1,2, Florent Dougados2, Carmen Torres1
1Centro Nacional de Aceleradores (U. Sevilla, CSIC, J. de Andalucia), 41092 Sevilla, Spain.
Abstract:
Over the past few years, Low-Gain Avalanche Detectors (LGADs) have demonstrated excellent timing performance, showing great potential for use in 4D tracking of high-energy charged particles. Carbon co-doping is a key factor for enhancing LGAD performance, which are detectors with intrinsic amplification, in harsh radiation environments. This work presents a broad pre-irradiation characterization of the latest carbon-co-implanted (or carbonated) LGADs fabricated at IMB-CNM. The results indicate that the addition of carbon reduces the nominal gain of the devices compared with non-carbonated detectors. Furthermore, a comprehensive study is presented on how carbon co-implantation can either enhance or suppress the diffusion of the multiplication layer during LGAD fabrication, depending on the device structure and fabrication parameters.
More Related Videos
10:57Synthesis and Performance Characterizations of Transition Metal Single Atom Catalyst for Electrochemical CO2 Reduction
Published on: April 10, 2018
08:40Synthesis of Metal Nanoparticles Supported on Carbon Nanotube with Doped Co and N Atoms and its Catalytic Applications in Hydrogen Production
Published on: December 6, 2021