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Related Concept Videos

Schottky Barrier Diode01:27

Schottky Barrier Diode

413
Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
413
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

401
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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MOSFET: Depletion Mode01:20

MOSFET: Depletion Mode

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Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
423
Diode: Forward bias01:20

Diode: Forward bias

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In semiconductor devices, diodes play a crucial role in directing current flow, and its operation is primarily categorized into forward bias and reverse bias. A diode is said to be forward-biased when its p-type region is connected to the positive terminal of a battery and its n-type region is linked to the negative terminal. This configuration reduces the potential barrier within the diode, allowing current to flow easily from the p to the n-type region.
The behavior of a diode in forward bias...
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Biasing of P-N Junction01:16

Biasing of P-N Junction

638
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
638
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

290
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
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Related Experiment Video

Updated: Aug 2, 2025

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
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Current crowding in graphene-silicon schottky diodes.

Muhammad Abid Anwar1, Munir Ali1, Srikrishna Chanakya Bodepudi1

  • 1School of Micro-Nano Electronics, ZJU-Hangzhou Global Scientific and Technological Innovation Center, ZJU-UIUC Joint Institute, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, People's Republic of China.

Nanotechnology
|April 19, 2023
PubMed
Summary

Current crowding at graphene edges causes Graphene/Silicon (Gr/Si) Schottky interface failure during electrostatic discharge (ESD). Understanding these limitations is crucial for robust 2D-3D optoelectronic device design.

Keywords:
2D materialsbreakdown voltage (VBD)electrostatic discharge (ESD)graphene/silicon (Gr/Si) heterostructuretransmission line pulse (TLP)

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Area of Science:

  • Materials Science
  • Electrical Engineering
  • Nanotechnology

Background:

  • Graphene/Silicon (Gr/Si) Schottky interfaces are vital for advanced electronics.
  • Contact quality is critical for device performance and reliability.

Purpose of the Study:

  • Investigate failure mechanisms of Gr/Si interfaces under electrostatic discharge (ESD).
  • Identify dominant factors limiting Gr/Si junction performance in photodiode applications.

Main Methods:

  • Analysis of Gr/Si interfaces under high ESD conditions.
  • Material degradation and electrical breakdown studied using AFM, Raman, SEM, and EDX spectroscopies.

Main Results:

  • Severe current crowding at graphene contact edges identified as the primary cause of device breakdown.
  • Systematic analysis revealed material degradation and electrical failure modes.

Conclusions:

  • Gr/Si junctions exhibit limitations under high ESD, primarily due to current crowding.
  • Findings provide guidelines for the robustness of 2D-3D electronic and optoelectronic devices.