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Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

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Structural-disorder-driven critical quantum fluctuation and localization in two-dimensional semiconductors.

Bong Gyu Shin^1,2,3, Ji-Hoon Park⁴, Jz-Yuan Juo¹

¹Max Planck Institute for Solid State Research, Heisenbergstrasse 1, 70569, Stuttgart, Germany.

Nature Communications

|April 21, 2023

Summary

Structural disorder in 2D semiconductors drives metal-insulator transitions (MIT) via quantum fluctuations. This study reveals mechanisms of charge localization, band bending, and magnetic domain formation, crucial for understanding these complex quantum phase transitions.

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Area of Science:

Condensed Matter Physics
Materials Science
Quantum Mechanics

Background:

Quantum phase transitions (QPT) and metal-insulator transitions (MIT) in disordered systems are critical but poorly understood.
Challenges include the lack of clear order parameters and the dynamic nature of these transitions.

Purpose of the Study:

To elucidate the universal mechanism of structural-disorder-driven MIT in 2D semiconductors.
To investigate the role of quantum fluctuations, autocorrelation, and multifractality.

Main Methods:

Analysis of quantum fluctuations using autocorrelation and multifractality.
Investigating the effects of structural disorder on band gaps and charge localization.
Examining curvature-induced spin-orbit interactions and ferromagnetic domain formation.

Main Results:

Structural disorder causes band gap fluctuations and charge localization, forming band tails.
A localization-delocalization transition occurs with increasing doping due to unusual band bending.
Curvature induces non-uniform ferromagnetic domains and local spin-orbit variations.

Conclusions:

Structural disorder is key to understanding MIT in 2D materials.
Findings explain localization-delocalization, charge percolation, and spin glass phenomena.
Highlights the interplay of topological and magnetic disorders in 2D systems.