Buried Interface Dielectric Layer Engineering for Highly Efficient and Stable Inverted Perovskite Solar Cells and...

Area of Science:

• Materials Science
• Renewable Energy
• Photovoltaics

Background:

• Perovskite solar cells (PSCs) commercialization requires improved stability and scalability.
• Non-ideal interfaces in PSCs cause non-radiative recombination and degradation, hindering performance.
• Focus on surface defects is common, but buried interface effects require further study.

Purpose of the Study:

• To investigate and mitigate degradation and non-radiative recombination by addressing buried interfacial effects in PSCs.
• To develop an omnibearing strategy for modifying both buried and top surfaces of perovskite films.
• To enhance the overall performance and long-term stability of perovskite solar cells.

Main Methods:

• Incorporation of aluminum oxide (Al2O3) as a dielectric layer and growth scaffold for the buried surface.
• Application of phenethylammonium bromide as a passivation layer on both buried and top surfaces.
• Comprehensive characterization of interfacial properties, morphology, and device performance.

Main Results:

• Aluminum oxide filling of grain voids led to a denser buried interface morphology and reduced recombination centers.
• Open-circuit voltage (Voc) increased from 1.02 V to 1.14 V.
• Achieved power conversion efficiencies of 23.1% (0.1 cm2) and 22.4% (1 cm2).
• Demonstrated superior stability: 96% (0.1 cm2) and 89% (1 cm2) of initial performance retained after 1200h and 2500h illumination, respectively.

Conclusions:

• The dual surface modification strategy effectively reduces interfacial defects in PSCs.
• This approach offers a universal method for developing high-performance and stable perovskite solar cells and modules.
• Addressing buried interfaces is critical for advancing PSC technology towards commercial viability.