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Related Concept Videos

Van der Waals Interactions01:24

Van der Waals Interactions

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Atoms and molecules interact with each other through intermolecular forces. These electrostatic forces arise from attractive or repulsive interactions between particles with permanent, partial, or temporary charges. The intermolecular forces between neutral atoms and molecules are ion–dipole, dipole–dipole, and dispersion forces, collectively known as van der Waals forces.
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The ideal gas law is an approximation that works well at high temperatures and low pressures. The van der Waals equation of state (named after the Dutch physicist Johannes van der Waals, 1837−1923) improves it by considering two factors.
First, the attractive forces between molecules, which are stronger at higher densities and reduce the pressure, are considered by adding to the pressure a term equal to the square of the molar density multiplied by a positive coefficient a. Second, the volume...
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Related Experiment Video

Updated: Aug 1, 2025

Fabricating van der Waals Heterostructures with Precise Rotational Alignment
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Van der Waals nanomesh electronics on arbitrary surfaces.

You Meng1,2, Xiaocui Li1,3, Xiaolin Kang1

  • 1Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR.

Nature Communications
|April 27, 2023
PubMed
Summary
This summary is machine-generated.

Van der Waals (vdWs) interactions in tellurium (Te) systems enable novel nanomesh electronics. This approach overcomes synthesis constraints, offering high mobility and ultrafast photoresponse for advanced devices.

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Semiconductor Physics

Background:

  • Traditional chemical bonds (covalent, ionic) in semiconductors limit synthesis and heteroepitaxy.
  • Van der Waals (vdWs) interactions offer unique properties for overcoming these limitations.

Purpose of the Study:

  • To explore van der Waals (vdWs) interactions in one-dimensional tellurium (Te) systems.
  • To overcome synthesis and lattice-mismatch constraints in semiconductor fabrication.
  • To develop novel Te vdWs nanomeshes for advanced electronic devices.

Main Methods:

  • Lateral vapor growth of wafer-scale Te vdWs nanomeshes from self-welding Te nanowires at low temperatures (100°C).
  • Patterning of Te vdWs nanomeshes at the microscale.
  • Fabrication and characterization of paper-based infrared photodetectors and mixed-dimensional heterojunctions.

Main Results:

  • Achieved wafer-scale Te vdWs nanomeshes on arbitrary surfaces with greater integration freedom.
  • Demonstrated high field-effect hole mobility of 145 cm²/Vs.
  • Observed ultrafast photoresponse below 3 μs in paper-based infrared photodetectors.
  • Showcased controllable electronic structure in mixed-dimensional heterojunctions.

Conclusions:

  • Te vdWs nanomeshes, enabled by multi-scale vdWs interactions, offer a promising platform for next-generation electronics.
  • The low-temperature synthesis and patterning flexibility facilitate enhanced device functionality and broad applicability.
  • The demonstrated device metrics meet emerging technological demands for high-performance, versatile electronic components.