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Related Experiment Video

Updated: Aug 1, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

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Published on: May 13, 2020

Review on Resistive Switching Devices Based on Multiferroic BiFeO₃.

Xianyue Zhao^1,2, Stephan Menzel³, Ilia Polian⁴

¹Institute for Solid State Physics, Friedrich Schiller University Jena, Helmholtzweg 3, 07743 Jena, Germany.

Nanomaterials (Basel, Switzerland)

|April 28, 2023

Summary

This review explores resistive switching in bismuth ferrite (BiFeO₃) memristive devices. It analyzes fabrication, mechanisms like ferroelectricity, doping effects, and applications for optimized energy consumption.

Keywords:

FTJs VCM crystal structure energy consumption ferroelectricity multiferroic BiFeO3 resistive switching switching property

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Area of Science:

Materials Science
Condensed Matter Physics
Nanotechnology

Background:

Memristive devices offer advanced computing capabilities.
Bismuth ferrite (BiFeO₃) is a promising material for memristors due to its multiferroic properties.
Understanding resistive switching (RS) mechanisms is crucial for device optimization.

Purpose of the Study:

To comprehensively review the state-of-the-art research on BiFeO₃ (BFO)-based memristive devices.
To analyze fabrication techniques, lattice structures, and crystal types influencing RS behavior.
To evaluate physical mechanisms, doping effects, applications, and energy consumption optimization.

Main Methods:

Literature review of recent research on BFO memristive devices.
Analysis of fabrication methods for BFO thin films.
Examination of experimental and theoretical studies on RS mechanisms (ferroelectricity, valence change memory).

Main Results:

Various fabrication techniques yield BFO layers suitable for memristive applications.
Ferroelectricity and valence change memory are key RS mechanisms in BFO devices.
Doping significantly impacts RS characteristics and device performance.
BFO devices show potential in neuromorphic computing and memory applications.

Conclusions:

BFO-based memristive devices are highly tunable for advanced applications.
Further research into doping and interface engineering can enhance device efficiency and stability.
Optimization of energy consumption is critical for practical memristor deployment.