Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Room Temperature Multiferroicity in Bi-Doped ZnO Enabled by Lattice Distortion and Electronic Reconstruction.

Small methods·2026
Same author

Strong Room-Temperature Ferromagnetism of MoS<sub>2</sub> Compound Produced by Defect Generation.

Nanomaterials (Basel, Switzerland)·2024
Same author

Resistive Switching in Bigraphene/Diamane Nanostructures Formed on a La<sub>3</sub>Ga<sub>5</sub>SiO<sub>14</sub> Substrate Using Electron Beam Irradiation.

Nanomaterials (Basel, Switzerland)·2023
Same author

Ultrasonic processing of WO<sub>3</sub> nanosheets integrated Ti<sub>3</sub>C<sub>2</sub> MXene 2D-2D based heterojunctions with synergistic effects for enhanced water splitting and environmental remediation.

Ultrasonics sonochemistry·2023
Same author

Auxiliary Diagnostic Signal for Deep-Level Detection.

Nanomaterials (Basel, Switzerland)·2023
Same author

Transport Characteristics of Silicon Multi-Quantum-Dot Transistor Analyzed by Means of Experimental Parametrization Based on Single-Hole Tunneling Model.

Nanomaterials (Basel, Switzerland)·2023

Related Experiment Video

Updated: Aug 1, 2025

Solution-Processed "Silver-Bismuth-Iodine" Ternary Thin Films for Lead-Free Photovoltaic Absorbers
10:19

Solution-Processed "Silver-Bismuth-Iodine" Ternary Thin Films for Lead-Free Photovoltaic Absorbers

Published on: September 27, 2018

9.8K

Enhanced Photoresponse of High Crystalline Bi2Se3 Thin-Films Using Patterned Substrates.

Hak Dong Cho1, Juwon Lee1, Deuk Young Kim1,2

  • 1Quantum Functional Semiconductor Research Center, Dongguk University, Seoul 04620, Korea.

ACS Applied Materials & Interfaces
|April 28, 2023
PubMed
Summary

High-quality bismuth selenide (Bi2Se3) thin films grown on patterned sapphire substrates exhibit enhanced light absorption and improved photo-switching for electronic devices. This novel approach reduces defects and boosts performance for optoelectronic applications.

Keywords:
Bi2Se3patterned sapphire substratephotoresponsetopological insulatorvapor-phase transport deposition (VPTD)

More Related Videos

Novel Techniques for Observing Structural Dynamics of Photoresponsive Liquid Crystals
10:35

Novel Techniques for Observing Structural Dynamics of Photoresponsive Liquid Crystals

Published on: May 29, 2018

8.8K
Fabrication of Fully Solution Processed Inorganic Nanocrystal Photovoltaic Devices
11:06

Fabrication of Fully Solution Processed Inorganic Nanocrystal Photovoltaic Devices

Published on: July 8, 2016

10.5K

Related Experiment Videos

Last Updated: Aug 1, 2025

Solution-Processed "Silver-Bismuth-Iodine" Ternary Thin Films for Lead-Free Photovoltaic Absorbers
10:19

Solution-Processed "Silver-Bismuth-Iodine" Ternary Thin Films for Lead-Free Photovoltaic Absorbers

Published on: September 27, 2018

9.8K
Novel Techniques for Observing Structural Dynamics of Photoresponsive Liquid Crystals
10:35

Novel Techniques for Observing Structural Dynamics of Photoresponsive Liquid Crystals

Published on: May 29, 2018

8.8K
Fabrication of Fully Solution Processed Inorganic Nanocrystal Photovoltaic Devices
11:06

Fabrication of Fully Solution Processed Inorganic Nanocrystal Photovoltaic Devices

Published on: July 8, 2016

10.5K

Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Bismuth selenide (Bi2Se3) thin films are promising for room-temperature topological insulating applications.
  • Existing growth methods face challenges with defects and limited light absorption.

Purpose of the Study:

  • To achieve high-quality Bi2Se3 thin films with enhanced optoelectronic properties.
  • To investigate the effect of patterned sapphire substrates (PSS) on film crystallinity and performance.

Main Methods:

  • Vapor-phase transport deposition was employed to grow Bi2Se3 films on PSS.
  • Minimizing thermal dissociation of selenium atoms during deposition.
  • Characterization using X-ray diffraction (XRD) and photoresponse measurements.

Main Results:

  • High-crystallinity Bi2Se3 films were grown on PSS with reduced dislocations.
  • Enhanced light absorption in visible to near-infrared (NIR) ranges was observed.
  • Fabricated IR conversion devices showed improved photocurrent and faster photo-switching compared to those on Al2O3.

Conclusions:

  • Patterned sapphire substrates significantly improve the quality and performance of Bi2Se3 thin films.
  • The Bi2Se3/PSS heterostructure is a highly reliable material for advanced electronic and optoelectronic devices.
  • This method offers a pathway for developing next-generation NIR optoelectronic devices.