Self-Powered Bipolar Photodetector Based on a Ce-BaTiO₃ PTCR Semiconductor for Logic Gates

Ferroelectric materials bring new opportunities for self-powdered photodetectors, taking advantage of their anomalous bulk photovoltaic effect. However, ferroelectric-based photodetectors suffer from relatively poor responsivity and detectivity due to obstacles of low electrical conductivity and low photoelectric conversion ability. The present work proposes a strategy based on heterovalent ion Ce-doping into BaTiO₃ (Ce-BTO) that gives rise to a good room temperature conductivity combined with a significant PTCR (positive temperature coefficient of resistivity) effect. By utilizing a Ce-BTO PTCR semiconductor, a high-performance self-powered photodetector ITO/Ce-BTO/Ag is fabricated, demonstrating a polarity-switchable photoresponse with the change of wavelength due to the competition between hot electrons induced by the Ag plasmonic effect and electron-hole pairs separated by a Schottky barrier. Moreover, benefiting from the reduced bandgap and the introduced impurity states, good responsivity (9.85 × 10^-5 A/W) and detectivity (1.25 × 10¹⁰ Jones) as well as fast response/recovery time (83/47 ms) is achieved under 450 nm illumination. Finally, four representative logic gates ("OR", "AND", "NOR", and "NAND") are demonstrated with one photodetector via the bipolar photoresponse. This work opens an avenue to promote the application of PTCR semiconductors in optoelectronics, offering a conceivable means toward high-performance self-powered photodetectors.