High-Performance UV-Visible Dual-Band Self-Powered Photodetector Based on ZnO/BFZO/P3HT Heterojunction for Logic
Wulong Li1,2, Chuying Yu2, Zilong Tang3
1State Key Laboratory of High Performance Ceramics and Superfine Microstructures & CAS Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201899, China.
ACS Applied Materials & Interfaces
|July 18, 2025
Summary
This study introduces a novel ZnO/BFZO/P3HT photodetector using Zr4+-doped Bismuth Ferrite (BFZO) and P3HT, significantly boosting photocurrent and responsivity for broadband, self-powered applications.
Area of Science:
- Materials Science
- Optoelectronics
- Semiconductor Physics
Background:
- Bismuth Ferrite (BFO) shows promise for self-powered photodetectors due to its narrow bandgap.
- Practical applications of BFO are hindered by low photocurrent and poor visible-light responsivity.
- Novel material engineering is required to overcome BFO's limitations.
Purpose of the Study:
- To design and fabricate a novel n-ZnO/i-BFZO/p-P3HT heterojunction photodetector.
- To enhance the photocurrent and responsivity of BFO-based photodetectors in the visible-light region.
- To investigate the synergistic effects of Zr4+ doping and P3HT integration.
Main Methods:
- Fabrication of a heterojunction device using Zr4+-doped BFO (BFZO) and low-bandgap P3HT.
- Characterization of the photodetector's performance under UV and visible light illumination.
- Analysis of charge generation, separation, and transport mechanisms within the heterojunction.
Main Results:
- The ZnO/BFZO/P3HT heterojunction achieved a photocurrent of 1.04 mA/cm2 at 365 nm, a 27% enhancement over undoped BFO.
- Maximum responsivity reached 15.52 mA/W and specific detectivity was 4.35 × 1010 Jones under UV light.
- Under white light, responsivity and detectivity were significantly higher (0.9 and 2.1 times) than the reference device.
Conclusions:
- Zr4+ doping effectively passivates defects in BFO, improving its optoelectronic properties.
- P3HT incorporation broadens visible-light absorption and enhances hole extraction.
- The optimized n-i-p heterojunction configuration and synergistic effects enable efficient dual-band photodetection for advanced photonic applications.
