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Self-Powered Bipolar Photodetector Based on a Ce-BaTiO3 PTCR Semiconductor for Logic Gates
Chen Xi Li1,2, Chen Chen3, Lei Zhao2
1CAS Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201899, China.
ACS Applied Materials & Interfaces
|May 2, 2023
Summary
This study introduces Ce-doped BaTiO3 (Ce-BTO) for self-powered photodetectors, enhancing conductivity and enabling polarity-switchable responses. The novel Ce-BTO photodetector achieves high performance and demonstrates potential for optoelectronic logic gates.
Area of Science:
- Materials Science
- Optoelectronics
- Semiconductor Physics
Background:
- Ferroelectric materials offer potential for self-powered photodetectors via the bulk photovoltaic effect.
- Existing ferroelectric photodetectors face limitations in responsivity and detectivity due to low conductivity and photoelectric conversion efficiency.
Purpose of the Study:
- To develop a high-performance self-powered photodetector using a novel Ce-doped Barium Titanate (Ce-BTO) material.
- To investigate the properties of Ce-BTO, including its conductivity and positive temperature coefficient of resistivity (PTCR) effect.
- To explore the application of Ce-BTO in optoelectronic logic gates.
Main Methods:
- Heterovalent ion Ce-doping into BaTiO3 to create Ce-BTO.
- Fabrication of a self-powered photodetector with the structure ITO/Ce-BTO/Ag.
- Characterization of the photodetector's photoresponse, responsivity, detectivity, and response/recovery times.
- Demonstration of logic gate operations using the photodetector's bipolar photoresponse.
Main Results:
- Ce-BTO exhibits good room temperature conductivity and a significant PTCR effect.
- The fabricated ITO/Ce-BTO/Ag photodetector shows a polarity-switchable photoresponse dependent on wavelength.
- Achieved high responsivity (9.85 × 10^-5 A/W) and detectivity (1.25 × 10^10 Jones) with fast response (83 ms) and recovery (47 ms) times at 450 nm.
- Successfully demonstrated four logic gates (OR, AND, NOR, NAND) using the photodetector.
Conclusions:
- Ce-doping in BaTiO3 effectively enhances conductivity and introduces a PTCR effect, crucial for high-performance photodetectors.
- The Ce-BTO based photodetector exhibits excellent optoelectronic properties and unique polarity-switchable behavior.
- This work highlights the potential of PTCR semiconductors in advanced optoelectronics and self-powered devices.
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