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Updated: Jul 31, 2025
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A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
Published on: August 28, 2018
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Two-dimensional MoSi2As4-based field-effect transistors integrating switching and gas-sensing functions
Mi-Mi Dong1, Hang He1, Chuan-Kui Wang1
1Shandong Key Laboratory of Medical Physics and Image Processing & Shandong Provincial Engineering and Technical Center of Light Manipulations, School of Physics and Electronics, Shandong Normal University, Jinan 250358, China. ckwang@sdnu.edu.cn.
Nanoscale
|May 3, 2023
Summary
Researchers developed multifunctional nanoscale devices using MoSi2As4, integrating a field-effect transistor (FET) and gas sensor. Optimized MoSi2As4 FETs meet semiconductor criteria, enabling sensitive NH3 and NO2 detection for next-generation electronics.
Area of Science:
- Materials Science
- Nanotechnology
- Electronics Engineering
Background:
- Next-generation electronics demand multifunctional nanoscale devices.
- Two-dimensional (2D) materials offer unique properties for device integration.
- Molybdenum silicon arsenide (MoSi2As4) is a promising 2D material.
Purpose of the Study:
- To propose and investigate multifunctional devices based on 2D MoSi2As4.
- To integrate a field-effect transistor (FET) and a FET-type gas sensor.
- To optimize device performance for semiconductor applications and gas sensing.
Main Methods:
- First-principles calculations were employed to design and analyze the devices.
- Optimization strategies included underlap structures and high-dielectric-constant (κ) materials.
- Performance metrics for FETs and gas sensors were evaluated.
Main Results:
- A 5 nm gate-length MoSi2As4 FET achieved an on/off ratio of 1.38 × 104, meeting International Technology Roadmap for Semiconductors (ITRS) criteria.
- The MoSi2As4-based gas sensor demonstrated high sensitivity to NH3 (38%) and NO2 (46%).
- Gate voltage modulation enhanced sensitivity to 67% for NH3 and 74% for NO2, with weak interactions facilitating sensor recycling.
Conclusions:
- Multifunctional devices integrating high-performance FETs and sensitive gas sensors can be fabricated using 2D MoSi2As4.
- The proposed MoSi2As4 devices offer a promising platform for advanced electronic and sensing applications.
- This work provides theoretical guidance for the development of novel nanoscale devices.
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