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Updated: Jul 31, 2025

Developing High Performance GaP/Si Heterojunction Solar Cells
Published on: November 16, 2018
High-performance diodes based on black phosphorus/carbon nanomaterial heterostructures
Xiaowo Ye1, Yanming Zhang1, Shengguang Gao1
1National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Key Laboratory for Thin Film and Microfabrication of Ministry of Education, Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University Shanghai 200240 China chen.c.x@sjtu.edu.cn.
High-performance diodes were created using black phosphorus (BP) and carbon nanomaterials. These heterostructures, including BP/single-walled carbon nanotube (SWCNT) and BP nanoribbon (PNR)/graphene, show excellent rectification ratios for advanced integrated circuits.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Diode performance in integrated circuits is material-dependent.
- Black phosphorus (BP) and carbon nanomaterials offer unique properties for heterostructures.
- Favorable band matching in heterostructures enhances diode performance.
Purpose of the Study:
- Investigate novel Schottky junction diodes using 2D BP/SWCNT and PNR/graphene heterostructures.
- Analyze the impact of material composition and structure on diode characteristics.
- Demonstrate high-performance diode fabrication through synergistic material application.
Main Methods:
- Fabrication of Schottky junction diodes using 2D BP/SWCNT film heterostructures.
- Fabrication of Schottky junction diodes using PNR film/graphene heterostructures.
- Characterization of diode performance, including rectification ratio and ideal factor.
Main Results:
- A 2D BP/SWCNT Schottky diode achieved a rectification ratio of 2978 and an ideal factor of 1.5.
- A PNR film/graphene Schottky diode exhibited a high rectification ratio of 4455 and an ideal factor of 1.9.
- High rectification ratios were attributed to large Schottky barriers, leading to low reverse currents.
Conclusions:
- The thickness of 2D BP and stacking order significantly influence rectification ratio.
- PNR/graphene diodes showed superior rectification ratio and breakdown voltage compared to 2D BP/SWCNT diodes.
- Collaborative use of BP and carbon nanomaterials enables high-performance diode development.
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