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Spectral current density and responsivity scaling for Fourier transform photocurrent spectroscopy
J Kunc1, B Morzhuk1, M Shestopalov1
1Faculty of Mathematics and Physics, Institute of Physics, Charles University, Ke Karlovu 5, CZ-121 16 Prague 2, Czech Republic.
We developed a new method for Fourier transform Photocurrent (FTPC) spectroscopy to accurately measure photocurrent spectral density (A/eV) and responsivity (A/W). This technique is verified on InGaAs and SiC detectors, revealing detailed electronic transitions.
Area of Science:
- Spectroscopy
- Photodetector characterization
- Solid-state physics
Background:
- Fourier transform Photocurrent (FTPC) spectroscopy is a powerful tool for analyzing photodetectors.
- Accurate scaling of FTPC data to physical units like photocurrent spectral density and responsivity is crucial for quantitative analysis.
- Existing methods may lack the precision or applicability for diverse detector types.
Purpose of the Study:
- To propose and experimentally validate a robust methodology for scaling FTPC measurements.
- To extend the scaling to determine detector responsivity (A/W) under specific conditions.
- To demonstrate the technique's effectiveness on different semiconductor materials.
Main Methods:
- Development of a scaling methodology based on interferogram waveform analysis (constant background and interference).
- Formulation of conditions required for accurate data scaling in FTPC.
- Experimental verification using a calibrated Indium Gallium Arsenide (InGaAs) diode and a Silicon Carbide (SiC) interdigital detector.
Main Results:
- Successful scaling of arbitrary units to photocurrent spectral density (A/eV) was achieved.
- The methodology was extended to calculate responsivity (A/W) with narrow-band optical power measurements.
- Identification of impurity-band, interband, and slow mid-gap to conduction band transitions in the SiC detector.
Conclusions:
- The proposed FTPC scaling methodology provides accurate quantitative analysis of photodetector performance.
- This technique enables detailed characterization of electronic transitions in semiconductor devices.
- The method is versatile, applicable to various photodetector types and materials.
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