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Nanoscale phase separation on an AlGaN surface characterized by scanning diffusion microscopy.

Boyang Liu, Zhenghui Liu, Gengzhao Xu

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    |May 9, 2023
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    Scanning diffusion microscopy reveals AlGaN surface phase separation. This study quantifies local bandgap and Al composition variations, identifying gallium enrichment at island edges and V-pits, crucial for device performance.

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    Area of Science:

    • Materials Science
    • Semiconductor Physics
    • Surface Science

    Background:

    • Aluminum gallium nitride (AlGaN) is vital for deep ultraviolet optoelectronics and electronics.
    • Surface phase separation in AlGaN, characterized by compositional fluctuations, degrades device performance.
    • Understanding the micro-mechanisms of AlGaN surface phase separation is critical for material improvement.

    Purpose of the Study:

    • To investigate the mechanism of surface phase separation in AlGaN.
    • To quantitatively analyze local variations in AlGaN composition and bandgap.
    • To demonstrate the efficacy of scanning diffusion microscopy for studying AlGaN microstructures.

    Main Methods:

    • Utilized photo-assisted Kelvin force microscopy to perform scanning diffusion microscopy on an Al$_{0.3}$Ga$_{0.7}$N wafer.
    • Measured surface photovoltage spectra near the bandgap to probe local electronic properties.
    • Applied a theoretical model of scanning diffusion microscopy, incorporating bandgap shift and broadening parameters, to fit local absorption coefficients.

    Main Results:

    • Observed distinct surface photovoltage responses at the edge and center of AlGaN islands.
    • Quantitatively determined local bandgap and Al composition from fitted absorption coefficients.
    • Found lower bandgap (305 nm) and Al composition (0.31) at island edges, and lower bandgap (306 nm) at V-pits (Al composition ~0.30), indicating Ga enrichment.
    • Identified higher bandgap (300 nm) and Al composition (0.34) at island centers.

    Conclusions:

    • Scanning diffusion microscopy effectively reveals micro-scale compositional variations in AlGaN.
    • Gallium enrichment occurs at the edges of AlGaN islands and within V-pit defects.
    • These findings provide insights into the AlGaN surface phase separation mechanism, essential for optimizing device fabrication.