Related Experiment Video
Updated: Jul 31, 2025

05:57
Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station
Published on: April 1, 2020
8.1K
Monolithic silicon photonic 32x32 thin-CLOS AWGR for all-to-all interconnections
Optics Express
|May 9, 2023
Summary
This study presents a 32x32 silicon photonic Thin-CLOS router for scalable all-to-all interconnections. It achieves 4 dB insertion loss and error-free 25 Gb/s communication, enabling advanced photonic networks.
Area of Science:
- Photonics
- Integrated Optics
- Optical Interconnection Networks
Background:
- Scalable all-to-all interconnection fabrics are crucial for high-performance computing and data centers.
- Existing silicon photonic solutions face challenges in port count and integration density.
Purpose of the Study:
- To design, fabricate, and demonstrate a monolithic 32x32 silicon photonic Thin-CLOS arrayed waveguide grating router (AWGR).
- To enable scalable silicon photonic all-to-all interconnection fabrics with high performance.
Main Methods:
- Integration of four 16-port silicon nitride AWGRs using a multi-layer waveguide routing method.
- Fabrication of a monolithic silicon photonic (SiPh) 32x32 Thin-CLOS device.
- Experimental demonstration of the device's performance.
Main Results:
- Achieved 4 dB insertion loss.
- Demonstrated adjacent channel crosstalk below -15 dB.
- Achieved non-adjacent channel crosstalk below -20 dB.
- Successfully demonstrated error-free communication at 25 Gb/s.
Conclusions:
- The fabricated 32x32 SiPh Thin-CLOS AWGR is a viable solution for scalable photonic interconnection fabrics.
- The multi-layer integration and compact design enable high port counts.
- The demonstrated performance metrics support its application in high-speed data communication.
Related Concept Videos
Semiconductors
754
There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
754
Metal-Semiconductor Junctions
397
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
397

